ESD9N5BU 1 - line , bi - d irectional, ultra - low capacitance, trans ient voltage suppressors descriptions the ESD9N5BU is a t ransient voltage suppress ors (tvs) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (esd ) . i t is designed to replace multiplayer varistors (mlv) in consumer equipments applications such as mobile phone, notebook, pad, stb, lcd tv etc. the ESD9N5BU was past esd transient voltage up to 12kv (contact) according t o iec61000 - 4 - 2 and withstand peak current up to 3a for 8/20 s pulse according to iec61000 - 4 - 5. the ESD9N5BU is available in dfn1006 package. standard products are pb - free and h alogen - free. features ? reverse stand - off voltage: 5.0v max. ? transient prote ction for each line according to iec61000 - 4 - 2 (esd) : 12kv ( contact discharge) : 15kv ( air discharge) iec61000 - 4 - 4 (eft) : 40a (5/50ns) iec61000 - 4 - 5 (surge) :3a (8/20 s) ? ultra - low capacitance ? low clamping voltage ? low leakage current ? small package ap plications ? mobile phone ? pad ? notebook ? stb ? lcd tv ? digital camera ? other electronics equipments dfn1006 - 2l (bottom v iew) circuit d iagram * = month (a~z) u = device code marking (top view) order i nformation device package shipping ESD9N5BU - 2/tr dfn1006 - 2l 10 000/tape&reel pin 1 pin 2 pin 1 pin 2 u * 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute m aximum r ating s electronics characteristics (ta=25 o c, unless otherwise noted) 8/20us w aveform iec61000 - 4 - 2 waveform parameter symbol rating unit peak pulse power (tp=8/20 s) pp k 54 w peak pulse current (tp=8/20 s) ipp 3 a esd v oltage iec61000 - 4 - 2 air v esd 15 kv esd v oltage iec61000 - 4 - 2 contact 12 operation junction temperature t j 1 25 o c lead temperature t l 260 o c storage temperature ts g - 55~150 o c parameter symbol condition min. typ. max. unit reverse stand - off voltage v rwm 5.0 v reveres leakage current i r v rwm = 5 v 1 .0 a reveres breakdown voltage v br i t = 1ma 7.0 8. 5 10.0 v clamping v oltage v c ipp=1a tp=8/20us 14 v ipp= 3 a tp=8/20us 1 8 v junction capacitance c j f=1mhz, v r =0v 0.4 5 0. 7 pf 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 duration=20us front times=1.25*( t90-t10) =8us peak pulse current (%) peak pulse time (us) t 60ns 30ns tr=0.7~1ns 10 90 100 peak pulse current (%) ESD9N5BU 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical c haracteristics (ta=25 o c, unless otherwise noted) clamping voltage vs. p eak pulse current non - repetitive peak pulse power vs. pulse time esd clamping voltage (iec61000 - 4 - 2 + 8 kv contact) capacitance vs. reveres voltage power derating vs. temperat ure esd clamping voltage (iec61000 - 4 - 2 - 8 kv contact) 0 1 2 3 4 5 0.2 0.3 0.4 0.5 0.6 f signal =1mhz v signal =50mvrms c - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse duration(us) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0 1 2 3 4 4 8 12 16 20 pulse waveform: tp=8/20us v c - clamping voltage (v) ipp - peak pulse current (a) ESD9N5BU 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn1006 - 2l top view bottom view side view symbol dimensions in millimeter min. typ. max. a 0.40 - 0.50 a1 0.00 - 0.0 5 a3 0.125 ref. d 0.95 1.00 1.05 e 0.55 0.60 0.65 b 0.20 0.25 0.30 l 0.45 0.50 0.55 e 0.65 typ. recommend land pattern (unit: mm) 0 . 30 0 . 85 1 . 40 0 . 55 0 . 60 note s : t his recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. ESD9N5BU 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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